Features Dual P-Channel, -5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching High Effective Pb-free lead plating; RoHS compliant VSO010P03MD -30V/-10A Dual P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -30 13 16 -10 SOP8 V mΩ mΩ A Part ID VSO010P03MD Pack.
Dual P-Channel, -5V Logic Level Control
Enhancement mode
Low on-resistance RDS(on) @ VGS=-4.5 V
Fast Switching
High Effective
Pb-free lead plating; RoHS compliant
VSO010P03MD
-30V/-10A Dual P-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID
-30 13 16 -10
SOP8
V mΩ mΩ A
Part ID VSO010P03MD
Package Type SOP8
Marking 010P03MD
Tape and reel information 3000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSO010N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSO010N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSO011N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSO011P03MD |
Vanguard Semiconductor |
Dual P-Channel Advanced Power MOSFET | |
5 | VSO012N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSO012N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSO012N06MS-A |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSO012N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSO013N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSO013N08HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSO013N08MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSO013N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |