VSO011N06MS - Vanguard Semiconductor

VSO011N06MS N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VSO011N06MS 60V/12A N-Channel Advanced Power MOSFEST V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 60 V 11 mΩ 12.8 mΩ 12 A SOP8 Part ID VSO011N06MS Package Type SOP8 Marking 011N06.

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Low on-resistance RDS(on) @ VGS=4.5 V
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSO011N06MS 60V/12A N-Channel Advanced Power MOSFEST V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 60 V 11 mΩ 12.8 mΩ 12 A SOP8 Part ID VSO011N06MS Package Type SOP8 Marking 011N06M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS PD VGS.