VSO011P03MD - Vanguard Semiconductor

VSO011P03MD Dual P-Channel Advanced Power MOSFET

VSO011P03MD -30V/-13A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel,-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -30 11 15 -13 SOP8 V mΩ mΩ A Part ID VSO0.

Features

 Dual P-Channel,-5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=-4.5 V
 Fast Switching
 High Effective
 Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -30 11 15 -13 SOP8 V mΩ mΩ A Part ID VSO011P03MD Package Type SOP8 Marking 011P03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested.