VSD007N06MS - Vanguard Semiconductor

VSD007N06MS N-Channel Advanced Power MOSFET

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 5.0 mΩ R @DS(on),TYP VGS=4.5V 6.0 mΩ I D 85 A TO-252 Part ID VSD007N06MS Package Type TO-252 Marking.

Features

 N-Channel
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSD007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 5.0 mΩ R @DS(on),TYP VGS=4.5V 6.0 mΩ I D 85 A TO-252 Part ID VSD007N06MS Package Type TO-252 Marking Tape and reel information 007N06M 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Vol.