VS3107AT - Vanguard Semiconductor

VS3107AT N-Channel Advanced Power MOSFET

VS3107AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a w.

Features

♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS3107AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Abso.