VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise .
30V/8A Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET SOP8 Description VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS30150AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VS3019AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VS3038AO |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VS3060AD |
Vanguard Semiconductor |
30V/60A N-Channel Advanced Power MOSFET | |
5 | VS3060AS |
Vanguard Semiconductor |
30V/20A N-Channel Advanced Power MOSFET | |
6 | VS3072AD |
Vanguard Semiconductor |
30V/72A N-Channel Advanced Power MOSFET | |
7 | VS3080AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VS3090BD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VS30P39AE |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
10 | VS30P39AP |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
11 | VS30P60AD |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
12 | VS30P60AI |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET |