VS3090BD - Vanguard Semiconductor

VS3090BD N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3090BD 30V/68A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 5.5 mΩ 7.5 mΩ 68 A TO-252 Part ID VS3090BD Package Type T.

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VS3090BD 30V/68A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 5.5 mΩ 7.5 mΩ 68 A TO-252 Part ID VS3090BD Package Type TO-252 Marking 3090BD Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VG.