VS3060AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a w.
♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS3060AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS3060AS |
Vanguard Semiconductor |
30V/20A N-Channel Advanced Power MOSFET | |
2 | VS3009DS |
Vanguard Semiconductor |
30V/8A Dual N-Channel Advanced Power MOSFET | |
3 | VS30150AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VS3019AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VS3038AO |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VS3072AD |
Vanguard Semiconductor |
30V/72A N-Channel Advanced Power MOSFET | |
7 | VS3080AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VS3090BD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VS30P39AE |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
10 | VS30P39AP |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
11 | VS30P60AD |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
12 | VS30P60AI |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET |