VS3009DS Vanguard Semiconductor 30V/8A Dual N-Channel Advanced Power MOSFET Datasheet, en stock, prix

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VS3009DS

Vanguard Semiconductor
VS3009DS
VS3009DS VS3009DS
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Part Number VS3009DS
Manufacturer Vanguard Semiconductor
Description VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an e...
Features 30V/8A Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET SOP8 Description VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gat...

Document Datasheet VS3009DS Data Sheet
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