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This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MO.
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and high gain
Applications
► Motor controls
► Converters
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a devi.
VN2460 - Microchip
The VN2460 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VN2406 |
Supertex Inc |
N-Channel Vertical DMOS FETs |
|
| 2 | VN2406B |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors |
|
| 3 | VN2406D |
Vishay Siliconix |
N-Channel MOSFETs |
|
| 4 | VN2406D |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors |
|
| 5 | VN2406L |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors |
|
| 6 | VN2406L |
ON Semiconductor |
Small Signal MOSFET |
|
| 7 | VN2406L |
Motorola Inc |
TMOS FET Transistor |
|
| 8 | VN2406L |
Vishay Siliconix |
N-Channel MOSFETs |
|
| 9 | VN2406M |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors |
|
| 10 | VN2410 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FET |
|
| 11 | VN2410 |
Microchip |
N-Channel Vertical DMOS FET |
|
| 12 | VN2410L |
Motorola Inc |
TMOS FET Transistor |
|