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VN2406M - Siliconix

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VN2406M N-Channel Enhancement-Mode MOS Transistors

ICrSiliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (fl) (A) PACKAGE VN2406L 240 6 0.22 TO-92 VN2406M 240 6 0.25 TO-237 Performance Curves: VNDB24 (See Section 7) VN2406L, VN2406M N-Channel Enhancement-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN A.

Features

um junction temperature 6-95 VN2406L, VN2406M ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~~:~gnductance 3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)OS:'l VaS(th) lass loss 10(ON) rOS(ON) gFS gos C 'SS Coss C rss td(ON) t, td(OFF) tf TEST CONDITIONS Vas=OV.10=100Jl.A Vos = Vas. 10 = 1 mA Vos = 0 V Vas =±15 V I TJ =.

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