ICrSiliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (fl) (A) PACKAGE VN2406L 240 6 0.22 TO-92 VN2406M 240 6 0.25 TO-237 Performance Curves: VNDB24 (See Section 7) VN2406L, VN2406M N-Channel Enhancement-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN A.
um junction temperature 6-95 VN2406L, VN2406M ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~~:~gnductance 3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)OS:'l VaS(th) lass loss 10(ON) rOS(ON) gFS gos C 'SS Coss C rss td(ON) t, td(OFF) tf TEST CONDITIONS Vas=OV.10=100Jl.A Vos = Vas. 10 = 1 mA Vos = 0 V Vas =±15 V I TJ =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN2406 |
Supertex Inc |
N-Channel Vertical DMOS FETs | |
2 | VN2406B |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
3 | VN2406D |
Vishay Siliconix |
N-Channel MOSFETs | |
4 | VN2406D |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
5 | VN2406L |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
6 | VN2406L |
ON Semiconductor |
Small Signal MOSFET | |
7 | VN2406L |
Motorola Inc |
TMOS FET Transistor | |
8 | VN2406L |
Vishay Siliconix |
N-Channel MOSFETs | |
9 | VN2410 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FET | |
10 | VN2410 |
Microchip |
N-Channel Vertical DMOS FET | |
11 | VN2410L |
Motorola Inc |
TMOS FET Transistor | |
12 | VN2410L |
Vishay Siliconix |
N-Channel MOSFET |