VN2406B - Siliconix

VN2406B N-Channel Enhancement-Mode MOS Transistors

.:r-Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN2406B 240 6 0.63 TO-205AD VN2406D 240 6 1.12 TO-220 Performance Curves: VNDB24 (See Section 7) VN2406B, VN2406D N-Channel Enhancement-Mode MOS Transistors TO-20SAD (TO-39) BOTTOM VIEW TO-220 1 SOURCE 2 GATE 3 DRAIN & CASE FRONT VIEW o 1 GAT.

Features

width limited by maximum junction temperature 6-93 II VN2406B, VN2406D ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~:n':6~nductance 3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)OSS VaS(th) lass loss 10(ON) rOS(ON) gFS gas C'ss Coss C rss td(ON) tr t d(OFF) tf TEST CONDITIONS Vas = 0 V, 10 = 100 jJ.A Vos = Vas, 10 = 1 .