This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS s.
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► Free from secondary breakdown
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► Low power drive requirement
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► Ease of paralleling
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► Low CISS and fast switching speeds
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► Excellent thermal stability
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► Integral source-drain diode
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► High input impedance and high gain
Applications
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► Motor controls
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► Converters
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► Amplifiers
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► Switches
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► Power supply circuits
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► Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN2406B |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
2 | VN2406D |
Vishay Siliconix |
N-Channel MOSFETs | |
3 | VN2406D |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
4 | VN2406L |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
5 | VN2406L |
ON Semiconductor |
Small Signal MOSFET | |
6 | VN2406L |
Motorola Inc |
TMOS FET Transistor | |
7 | VN2406L |
Vishay Siliconix |
N-Channel MOSFETs | |
8 | VN2406M |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
9 | VN2410 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FET | |
10 | VN2410 |
Microchip |
N-Channel Vertical DMOS FET | |
11 | VN2410L |
Motorola Inc |
TMOS FET Transistor | |
12 | VN2410L |
Vishay Siliconix |
N-Channel MOSFET |