www.DataSheet.co.kr New Product VFT2080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3 • Compliant to RoH.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
3
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
1 VFT2080S
PIN 1 PIN 2
2
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 20 A 80 V 150 A 0.70 V 150 °C
MECHANIC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT2080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
2 | VFT2080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
3 | VFT2080S-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VFT2045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VFT2045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VFT2045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VFT2045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
8 | VFT2060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VFT2060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VFT2060G |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VFT2060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VFT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier |