VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT2080C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT2080C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forw.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT2080C
PIN 1
K
PIN 2
H.
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2 | VFT2080S |
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3 | VFT2080S-E3 |
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4 | VFT2045BP |
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5 | VFT2045C |
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6 | VFT2045C-M3 |
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7 | VFT2045CBP |
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8 | VFT2060C |
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9 | VFT2060C-E3 |
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10 | VFT2060G |
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11 | VFT2060G-E3 |
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12 | VFT10200C |
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