www.vishay.com VFT2045C-M3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® ITO-220AB 123 VFT2045C PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package
2 x 10 A 45 V 160 A 0.41 V
150 °C ITO-220AB
Diode variation
Dual common cathode
MECHANICAL DATA
Case: I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT2045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VFT2045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
3 | VFT2045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VFT2060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VFT2060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VFT2060G |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VFT2060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VFT2080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
9 | VFT2080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
10 | VFT2080S |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
11 | VFT2080S-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | VFT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier |