VFT2045BP - Vishay

VFT2045BP Trench MOS Barrier Schottky Rectifier

VFT2045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5 A TMBS ® ITO-220AC FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • .

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2011/65/EU 2 1
• Halogen-free according to IEC 61249-2-21 definition VFT2045BP PIN 1 PIN 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 20 A TOP max. (AC mode) TJ max. (DC forward current) 20 A 45 V 160 A 0.51 V 150 °C 200 °C Case: ITO-22.