VF30100S - Vishay

VF30100S High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com VF30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definit.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 123 VF30100S PIN 1 PIN 2 PIN 3 PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM IFSM 100 V 250 A VF at IF = 30 A 0.69 V TJ max. 150 °C Package ITO-220AB Diode variation Single diode TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery pro.