VF30100C - Vishay

VF30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF30100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB30100C PIN 1 K PIN 2 HEATSINK VI30100C PIN.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: .