VF30100C-E3 - Vishay

VF30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB ITO-220AB V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF30100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Low thermal resistance
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 VB30100C PIN 1 K PIN 2 HEATSINK ADDITIONAL RESOURCES 3D 3D 3D Models VI30100C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A .