VF30100S |
Part Number | VF30100S |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com VF30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 123 VF30100S PIN 1 PIN 2 PIN 3 PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM IFSM 100 V 250 A VF at IF = 30 A 0.69 V TJ max. 150 °C Package ITO-220AB Diode variation Single diode TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery pro... |
Document |
VF30100S Data Sheet
PDF 81.19KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VF30100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VF30100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VF30100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VF30100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VF30120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |