VBT6045CBP-M3 - Vishay

VBT6045CBP-M3 Trench MOS Barrier Schottky Rectifier

www.vishay.com VBT6045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A TMBS ® TO-263AB K 2 1 VBT6045CBP PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL .

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• TJ 200 °C max. in solar bypass mode application
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM 2 x 30 A 45 V 320 A VF at IF = 30 A 0.47 V TOP max. (AC mode) TJ max. (DC forward curr.