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VBT6045CBP-M3 |
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| Part Number | VBT6045CBP-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com VBT6045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A TMBS ® TO-263AB K 2 1 VBT604... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM 2 x 30 A 45 V 320 A VF at IF = 30 A 0.47 V TOP max. (AC mode) TJ max. (DC forward curr... |
| Document |
 VBT6045CBP-M3 Data Sheet
PDF 86.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VBT6045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier |
|
| 2 | VBT6045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VBT6045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VBT6045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VBT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier |
|