VB20200G - Vishay

VB20200G Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.DataSheet.co.kr New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance .

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS 2 V20200G PIN 1 PIN 3 3 1 VF20200G PIN 1 PIN 3 PIN 2 2 3 1 PIN 2 CASE TO-263AB K K TO-262AA 2 1 1 VB20200G PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency co.