www.DataSheet.co.kr New Product V20150S, VF20150S, VB20150S & VI20150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V20150S PIN 1 3 1 VF20150S.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
2 V20150S
PIN 1
3 1 VF20150S
PIN 1 PIN 2
2
3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS
1
PIN 2 CASE
PIN 3
PIN 3
TO-263AB K K
TO-262AA
A NC 1 VB20150S
NC A K HEATSINK PIN 1
2
3
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB20150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB20150C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB20150S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB20150S-M3 |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB20150SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB20150SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |