V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20150S 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20150S 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky techn.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
A NC
VB20150S
NC K A HEATSINK
DES.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB20150S-M3 |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB20150S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB20150SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB20150SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB20150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB20150C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |