www.vishay.com VB20150S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K A NC VB20150S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package Circuit configura.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals:.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB20150S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB20150S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB20150SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB20150SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB20150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB20150C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB20100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB20100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB20100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VB20100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VB20100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |