VB20120SG-M3 - Vishay

VB20120SG-M3 High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com VB20120SG-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VB20120SG NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency opera.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 20 A 120 V 150 A 0.78 V 150 °C D2PAK (TO-263AB) Circuit configuration Sin.