VB1695 - VBsemi

VB1695 N-Channel MOSFET

VB1695 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS = 4.5 V ID (A)a 4.0 3.8 Qg (Typ.) 2.1 nC TO-236 (SOT23) G1 S2 3D Top View FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Battery Swi.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested APPLICATIONS
• Battery Switch
• DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and S.