www.vishay.com VB10170C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material c.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VB10170C
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max.
2x5A 170 V 80 A 0.65 V 175 °C
MECHANICAL DATA
Case: TO-263AB Molding comp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB10170C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB10170C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB10170CHM3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB10150S |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB1205D-1W |
YUAN |
DC-DC CONVERTER | |
6 | VB1205D-2W |
YUAN |
DC-DC CONVERTER | |
7 | VB1205S-1W |
YUAN |
DC-DC CONVERTER | |
8 | VB1205S-2W |
YUAN |
DC-DC CONVERTER | |
9 | VB1209S-1W |
YUAN |
DC-DC CONVERTER | |
10 | VB1209S-2W |
YUAN |
DC-DC CONVERTER | |
11 | VB1212S-1W |
YUAN |
DC-DC CONVERTER | |
12 | VB1212S-2W |
YUAN |
DC-DC CONVERTER |