VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 VB10170C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2x5A 170 V 80 A 0.65 V 175 °C TO-263AB Diode.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB10170C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB10170C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB10170CHM3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB10150S |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB1205D-1W |
YUAN |
DC-DC CONVERTER | |
6 | VB1205D-2W |
YUAN |
DC-DC CONVERTER | |
7 | VB1205S-1W |
YUAN |
DC-DC CONVERTER | |
8 | VB1205S-2W |
YUAN |
DC-DC CONVERTER | |
9 | VB1209S-1W |
YUAN |
DC-DC CONVERTER | |
10 | VB1209S-2W |
YUAN |
DC-DC CONVERTER | |
11 | VB1212S-1W |
YUAN |
DC-DC CONVERTER | |
12 | VB1212S-2W |
YUAN |
DC-DC CONVERTER |