VB1695 |
Part Number | VB1695 |
Manufacturer | VBsemi |
Description | VB1695 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS = 4.5 V ID (A)a 4.0 3.8 Qg (Typ.) 2.1 nC TO-236 (SOT23) G1 S2 3D T... |
Features |
• Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and S... |
Document |
VB1695 Data Sheet
PDF 293.79KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | VB10150S |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VB10170C |
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VB10170C-E3 |
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Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB10170C-M3 |
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Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB10170CHM3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |