V40150C - Vishay Siliconix

V40150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40150C, VI40150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 3 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, p.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V40150C PIN 1 PIN 2 PIN 3 CASE VI40150C PIN 1 PIN 2 PIN 3 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 150 V.