V40100K - Vishay

V40100K Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A at TJ = 125 °C TJ max. Package 2 x 20 A 100 V 250 A 0.63 V 150 °C TO-220AB Diode variation Dual common cathode FEATURES • 150 °C high perfo.

Features

• 150 °C high performance Schottky diode
• Very low forward voltage drop
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• Negligible switching losses
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, high efficiency SMPS, output rectification, freewheeling, reverse battery protection, DC/DC system and increased power density systems. MECHANICAL DATA Case: TO-220AB Moldi.