V40170C-M3 - Vishay

V40170C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40170C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For d.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 V40170C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 170 V 200 A 0.68 V 175 °C TO-220AB Diode variation Dual common c.