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V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V40150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K 123 VF40150C PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB40150C PIN 1 K PIN 2 .
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packag.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | V40150C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | V40100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | V40100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | V40100G |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | V40100G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 6 | V40100K |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 7 | V40100P |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 8 | V40100PG |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 9 | V40100PGW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 10 | V40100PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 11 | V40120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 12 | V40170C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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