V30DM120C - Vishay

V30DM120C Trench MOS Barrier Schottky Rectifier

www.vishay.com V30DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V30DM120C Anode 1 K Anode 2 Cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for aut.

Features

• Trench MOS Schottky technology Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing dio.