The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 50mΩ @ VGS=4.5V, ID=4.2A * RDS(ON) ≤ 63mΩ @ VGS=2.5V, ID=3.7A * RDS(ON) ≤ 87mΩ @ VGS=1.8V, ID=3.2A * Low capacitance * Low gat.
* RDS(ON) ≤ 50mΩ @ VGS=4.5V, ID=4.2A
* RDS(ON) ≤ 63mΩ @ VGS=2.5V, ID=3.7A
* RDS(ON) ≤ 87mΩ @ VGS=1.8V, ID=3.2A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3414L-AE2-R
UT3414G-AE2-R
UT3414L-AE3-R
UT3414G-AE3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-23-3 SOT-23
Pin Assignment
1
2
3
G
S
D
G
S
D
Packing
Tape Reel Tape Reel
MARKING
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QW-R502-248.I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UT3413 |
Unisonic Technologies |
Power MOSFET | |
2 | UT3415 |
UTC |
P-CHANNEL POWER MOSFET | |
3 | UT3416 |
Unisonic Technologies |
N-CHANNEL MOSFET | |
4 | UT3416-H |
UTC |
N-CHANNEL MOSFET | |
5 | UT3418 |
UTC |
N-Channel Power MOSFET | |
6 | UT3419 |
Unisonic Technologies |
Power MOSFET | |
7 | UT3400 |
UTC |
N-CHANNEL MOSFET | |
8 | UT3400-H |
UTC |
30V N-CHANNEL MOSFET | |
9 | UT3401 |
UTC |
P-Channel MOSFET | |
10 | UT3401Z |
UTC |
P-CHANNEL POWER MOSFET | |
11 | UT3403 |
UTC |
P-CHANNEL MOSFET | |
12 | UT3404 |
UTC |
N-CHANNEL MOSFET |