UT3401Z - UTC

UT3401Z P-CHANNEL POWER MOSFET

The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source  ORDERING INF.

Features

4.2 -30 A A Power Dissipation (Note 2) Junction Temperature PD 1 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. Pulse width ≤ 300μs, duty cycle ≤ 2%.
 THERMAL DATA PARAMETER SYMBOL RATINGS Junction to Ambient θJA 125 Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ.