The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source ORDERING IN.
)
ID IDM
-2.6 A -20 A
Power Dissipation(Note 3) Junction Temperature
PD 1.4 W
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction to Ambient (Note 3)
SYMBOL θJA
MIN
TYP 100
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
MAX 125
UNIT °C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS Drain-Source Break.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UT3400 |
UTC |
N-CHANNEL MOSFET | |
2 | UT3400-H |
UTC |
30V N-CHANNEL MOSFET | |
3 | UT3401 |
UTC |
P-Channel MOSFET | |
4 | UT3401Z |
UTC |
P-CHANNEL POWER MOSFET | |
5 | UT3404 |
UTC |
N-CHANNEL MOSFET | |
6 | UT3409 |
UTC |
P-CHANNEL MOSFET | |
7 | UT3413 |
Unisonic Technologies |
Power MOSFET | |
8 | UT3414 |
Unisonic Technologies |
Power MOSFET | |
9 | UT3415 |
UTC |
P-CHANNEL POWER MOSFET | |
10 | UT3416 |
Unisonic Technologies |
N-CHANNEL MOSFET | |
11 | UT3416-H |
UTC |
N-CHANNEL MOSFET | |
12 | UT3418 |
UTC |
N-Channel Power MOSFET |