UT3401 - UTC

UT3401 P-Channel MOSFET

The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  SYMBOL Drain Power MOSFET Gate Source  ORDERING INFORMATIO.

Features

Continuous Drain Current (Note 1) ID -4.2 A Pulsed Drain Current (Note 2) IDM -30 A Power Dissipation (Note 1) Junction Temperature PD 1.25 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction-to-Ambient θJA 100 °C/W Notes: Surface mounted on 1 in2 copper pad of FR4 board with 2oz. Copper, in a still air environmen.