UPA1717 - NEC

UPA1717 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 • Low Ciss : Ciss = 830 pF TYP. • Built-in G-S prote.

Features

• Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10
  –0.05
• Low Ciss : Ciss = 830 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10
  –0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.12 M µPA1717G ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Curre.