UPA1716 - NEC

UPA1716 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A) • Low Ciss : Ciss = 2100 pF TYP. • Built.

Features

• Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS =
  –10 V, ID =
  –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS =
  –4.5 V, ID =
  –4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS =
  –4.0 V, ID =
  –4 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 1 4 5.37 Max. +0.10
  –0.05 6.0 ±0.3 4.4 0.8 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.8 Max. 1.44 0.05 Min. 0.5 ±0.2 0.10 1.27 0.78 Max. 0.40 +0.10
  –0.05 µ PA1716G 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All term.