UPA1703 - NEC

UPA1703 SWITCHING N-CHANNEL POWER MOSFET

This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. 8 5 PACKAGE DIMENSIONS (in millimeter) FEATURES • Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ • Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A) 1 4 5.37 MAX. +0.10 –0.05 1, 2, 3 ; Source 4 ; Gate 5, 6,.

Features

• Super Low On-Resistance RDS(on)1 = 10.5 mΩ RDS(on)2 = 17 mΩ
• Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A) 1 4 5.37 MAX. +0.10
  –0.05 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain Ciss = 2180 pF TYP. 1.44 1.8 MAX. 6.0 ±0.3 4.4 0.8
• Built-in G-S Protection Diode
• Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10
  –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, all terminals are connected) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Notes1 Notes2 VDSS VGSS ID(DC) ID.