UPA1705 - NEC

UPA1705 N-Channel Power MOSFET

This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. PACKAGE DRAWING (Unit : mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES • Super low on-state resistance 1.44 RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10 .

Features

• Super low on-state resistance 1.44 RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10
  –0.05 0.8 RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
• Low Ciss : Ciss = 750 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10
  –0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1705G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Dra.