Bipolar Transistors Silicon PNP Epitaxial Type TTA008B 1. Applications • Power Amplifiers • Power Switching 2. Features (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ.) (IC = -1A) (4) Complementary to TTC015B 3. .
(1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ.) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. Start of c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TTA0001 |
INCHANGE |
PNP Transistor | |
2 | TTA0001 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
3 | TTA0002 |
INCHANGE |
PNP Transistor | |
4 | TTA0002 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
5 | TTA003 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
6 | TTA004 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
7 | TTA004B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
8 | TTA005 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
9 | TTA006B |
Toshiba |
Silicon PNP Transistors | |
10 | TTA007 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
11 | TTA009 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
12 | TTA010 |
Toshiba |
Silicon PNP Triple-Diffused Type Bipolar Transistors |