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Bipolar Transistors Silicon PNP Epitaxial Type TTA003 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Abs.
(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Junction temperature Storage temperature VCBO -80 V VCEO -80 VEBO -7 (Note 1) IC .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TTA0001 |
INCHANGE |
PNP Transistor |
|
| 2 | TTA0001 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 3 | TTA0002 |
INCHANGE |
PNP Transistor |
|
| 4 | TTA0002 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 5 | TTA004 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 6 | TTA004B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 7 | TTA005 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 8 | TTA006B |
Toshiba |
Silicon PNP Transistors |
|
| 9 | TTA007 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 10 | TTA008B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 11 | TTA009 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 12 | TTA010 |
Toshiba |
Silicon PNP Triple-Diffused Type Bipolar Transistors |
|