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Bipolar Transistors Silicon PNP Epitaxial Type TTA004B 1. Applications • Audio-Frequency Amplifiers 2. Features (1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA004B 1. Emitter.
(1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2016 Toshiba Corporation 1 Start of commercial producti.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TTA004 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 2 | TTA0001 |
INCHANGE |
PNP Transistor |
|
| 3 | TTA0001 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | TTA0002 |
INCHANGE |
PNP Transistor |
|
| 5 | TTA0002 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 6 | TTA003 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 7 | TTA005 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 8 | TTA006B |
Toshiba |
Silicon PNP Transistors |
|
| 9 | TTA007 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 10 | TTA008B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 11 | TTA009 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 12 | TTA010 |
Toshiba |
Silicon PNP Triple-Diffused Type Bipolar Transistors |
|