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Bipolar Transistors Silicon PNP Triple-Diffused Type TTA010 TTA010 1. Applications • High-Voltage Switching 2. Features (1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA) 3. Packaging and Interna.
(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA)
3. Packaging and Internal Circuit
1. Base 2. Collector (Heatsink) 3. Emitter
PW-Mini
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
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Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-500
V
Collector-emitter voltage
VCEO
-500
V
Emitter-base voltage
VEBO
-7
V
Collector current (DC)
(Note 1)
IC
-100
mA
Collector current (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TTA011 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 2 | TTA012 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 3 | TTA013 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 4 | TTA014 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|
| 5 | TTA0001 |
INCHANGE |
PNP Transistor |
|
| 6 | TTA0001 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 7 | TTA0002 |
INCHANGE |
PNP Transistor |
|
| 8 | TTA0002 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 9 | TTA003 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
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| 10 | TTA004 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 11 | TTA004B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
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| 12 | TTA005 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
|