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This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 5.0A,500V,Max.RDS(on)=1.50 Ω @ VGS =10V
• Low gate charge(typical 20nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP80R1K3S1 |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSP80R240S1 |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSP80R380S1 |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSP80R500S1 |
Truesemi |
N-Channel MOSFET |
|
| 5 | TSP80R600S1 |
Truesemi |
N-Channel MOSFET |
|
| 6 | TSP840M |
Truesemi |
N-Channel MOSFET |
|
| 7 | TSP8A100S |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 8 | TSP8N60M |
Truesemi |
600V N-Channel MOSFET |
|
| 9 | TSP8N65M |
Truesemi |
N-Channel MOSFET |
|
| 10 | TSP058A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 11 | TSP058B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 12 | TSP058C |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|